Patent · US Expired

Method for reducing electromigration in a copper interconnect

US6043153A · kind A · utility

48Cited by
4References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 25, 1997
Grant dateMar 28, 2000
Priority date—
Expiry dateSep 25, 2017

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/76841
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A system and method for providing copper interconnect in a trench formed in a dielectric is disclosed. In one aspect, the method and system include providing a copper layer; removing a portion of the copper layer outside of the trench; annealing the copper layer; and providing a layer disposed above the copper layer. In another aspect, the method and system include providing a copper interconnect formed in a trench on a dielectric. The copper interconnect includes a copper layer disposed in the trench and a layer disposed above the copper layer. The copper layer has a bamboo structure at least one grain. The at least one grain has substantially one orientation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.