Semiconductor device having dual gate electrode material and process of fabrication thereof

US6043157A · kind A · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Mark I. Gardner · Mabank, US
• Mark C. Gilmer · Austin, US

Key dates

• Filing date: Dec 18, 1997
• Grant date: Mar 28, 2000
• Expiry date: Dec 18, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

Generally, the present invention relates to a semiconductor device having a dual gate electrode material and a process of fabricating such a device. Consistent with one embodiment of the invention, a semiconductor device is formed by forming a first gate electrode over the substrate and forming a second gate electrode from a different material than the first gate electrode over the substrate. For example, the first gate electrode may be formed from polysilicon and a second gate electrode may be formed from a metal such as aluminum, titanium, cobalt, or copper. In accordance with one particular embodiment of the invention, the first and second gate electrodes are formed by forming a first layer of gate electrode material over the substrate, removing portions of the first gate electrode material to form the first gate electrode and a dummy gate electrode, forming a film over the substrate and between the first gate electrode and the dummy gate electrode, selectively removing the dummy gate electrode to form an opening while leaving the first gate electrode and the film substantially intact, and forming a second gate electrode in the opening.