Method of processing semiconductor substrate
US6043162A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 1997 |
| Grant date | Mar 28, 2000 |
| Priority date | — |
| Expiry date | Nov 6, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Contamination on semiconductor wafers in vapor phase etching is eliminated by performing the drying step quickly, thereby improving productivity. This method includes the steps of etching the semiconductor wafers by introducing a reactive gas into the reaction chamber, restoring the pressure in the reaction chamber to the atmospheric pressure by introducing an inert gas into the reaction chamber, cleaning the semiconductor wafers, drying the semiconductor wafers, and introducing an alcoholic gas into the reaction chamber. The inner wall of the reaction chamber is maintained constantly at a predetermined temperature in the range of from 50.degree. C. to 80.degree. C. Alcohol having a boiling point at least 10.degree. C. lower than the predetermined temperature is chosen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.