Inventor · Machida, JP

Kunitoshi Namba

27Patents
17h-index
33Co-inventors
81Inventor score

Filing activity: Nov 6, 1997 → Aug 19, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US8394466B2 Method of forming conformal film having si-N bonds on high-aspect ratio pattern Electricity 572 Active
US8669185B2 Method of tailoring conformality of Si-containing film Electricity 566 Active
US8679958B2 Methods for forming doped silicon oxide thin films Electricity 463 Active
US9153441B2 Methods for forming doped silicon oxide thin films Electricity 456 Active
US9607837B1 Method for forming silicon oxide cap layer for solid state diffusion process Electricity 453 Active
US9368352B2 Methods for forming doped silicon oxide thin films Electricity 452 Active
US9564314B2 Methods for forming doped silicon oxide thin films Electricity 449 Active
US8084104B2 Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition Electricity 448 Active
US9464352B2 Low-oxidation plasma-assisted process Electricity 447 Active
US9899291B2 Method for protecting layer by forming hydrocarbon-based extremely thin film Electricity 447 Active
US9875893B2 Methods for forming doped silicon oxide thin films Electricity 402 Active
US10147600B2 Methods for forming doped silicon oxide thin films Electricity 399 Active
US10014212B2 Selective deposition of metallic films Electricity 374 Active
US9803277B1 Reaction chamber passivation and selective deposition of metallic films Electricity 74 Active
US9805974B1 Selective deposition of metallic films Electricity 52 Active
US10041166B2 Reaction chamber passivation and selective deposition of metallic films Electricity 51 Active
US10480064B2 Reaction chamber passivation and selective deposition of metallic films Electricity 43 Active
US10793946B1 Reaction chamber passivation and selective deposition of metallic films Electricity 15 Active
US10410857B2 Formation of SiN thin films Electricity 12 Active
US6043162A Method of processing semiconductor substrate Emerging Cross-Sectional Technologies 8 Expired
US9576790B2 Deposition of boron and carbon containing materials Electricity 6 Active
US10510530B2 Methods for forming doped silicon oxide thin films Electricity 2 Active
US11133181B2 Formation of SiN thin films Electricity 2 Active
US10784105B2 Methods for forming doped silicon oxide thin films Electricity 1 Active
US8133555B2 Method for forming metal film by ALD using beta-diketone metal complex Chemistry; Metallurgy 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.