Trench-gated MOSFET with integral temperature detection diode
US6046470A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 1997 |
| Grant date | Apr 4, 2000 |
| Priority date | — |
| Expiry date | Oct 7, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
Abstract
A vertical N-channel trenched-gate power MOSFET includes an integral temperature detection diode. The diode includes an N+ region which serves as the cathode and which is formed within a tub of P-type material, which serves as the anode. The N+ region is separated from the trench. The anode of the temperature detection diode may be shorted to the source or may be separately biased. The temperature of the MOSFET is monitored by supplying a current through the diode in the forward direction and measuring the voltage across the forward-biased diode. In an alternative embodiment, a pair of N+ regions are formed within the P-tub, constituting a diode pair, and the temperature is detected by monitoring the difference in the voltages across the diodes. An overtemperature detection unit compares the voltage across the diode or diodes with a reference voltage and provides an output which can be used to turn the MOSFET off when the temperature reaches a predetermined level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.