Method for crystallizing an amorphous silicon thin film
US6048758A · kind A · utility
109Cited by
7References
29Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 23, 1997 |
| Grant date | Apr 11, 2000 |
| Priority date | — |
| Expiry date | Jan 23, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0321
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A little amount of nickel is introduced into an amorphous silicon film formed on a glass substrate to crystallize the amorphous silicon film by heating. In this situation, nickel elements remain in a crystallized silicon film. An amorphous silicon film is formed on the surface of the crystallized silicon film and then subjected to a heat treatment. With this heat treatment, the nickel elements are diffused in the amorphous silicon film, thereby being capable of lowering the concentration of nickel in the crystallized silicon film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.