Method of forming a titanium film and a barrier metal film on a surface of a substrate through lamination
US6051281A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1997 |
| Grant date | Apr 18, 2000 |
| Priority date | — |
| Expiry date | Sep 30, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a titanium film and a titanium nitride film on a substrate by lamination which method is capable of suppressing contamination of the substrate due to the by-product and of reducing a contact resistance value of the titanium film. By carrying out the step of forming a titanium film on a surface of a substrate, the step of subjecting the substrate to the plasma processing in an atmosphere of the mixed gas of nitrogen gas and hydrogen gas, thereby nitriding a surface layer of the titanium film to form thereon a nitride layer, and the step of forming a barrier film (e.g., a titanium nitride film) on the titanium film having the nitride layer formed thereon, both the titanium film and the titanium nitride film are formed on the substrate by lamination.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.