Preventing boron penetration through thin gate oxide of P-channel devices by doping polygate with silicon
US6051460A · kind A · utility
5Cited by
5References
9Claims
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Key dates
| Filing date | Nov 12, 1997 |
| Grant date | Apr 18, 2000 |
| Priority date | — |
| Expiry date | Nov 12, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/913
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A CMOS device and a method for forming the same is provided so as to overcome the problem of boron penetration through the thin gate oxide of P-channel devices. Silicon is implanted into the polysilicon gate electrode of the PMOS device functioning as a diffusion barrier for preventing boron penetration through the thin gate oxide and into the semiconductor substrate. As a result, the reliability of the CMOS device will be enhanced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.