Apparatus and methods of depositing a platinum film with anti-oxidizing function over a substrate
US6054331A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 1998 |
| Grant date | Apr 25, 2000 |
| Priority date | — |
| Expiry date | Jan 5, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A platinum film, which is used as a bottom electrode for a capacitor in a DRAM cell or a non-volatile ferroelectric memory cell, is formed in two separate processes, wherein a first thickness platinum part thereof is deposited under an inert gas atmosphere, and the second thickness platinum part is deposited under an atmosphere containing oxygen, nitrogen and/or a mixture thereof as well as an inert gas. The platinum film is annealed under a vacuum atmosphere to remove the oxygen an/or nitrogen introduced during the deposition of the second thickness platinum part. The annealed platinum film prevents formation of an oxide on a functional intermediate film such as a diffusion barrier layer or an adhesion layer, which is provided below the bottom electrode of platinum film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.