Grazing incident angle processing method for microelectronics layer fabrication

US6054390A · kind A · utility

Assignee

• Chartered Semiconductor Manufacturing LTD · SG

Inventors

• Erzhuang Liu · Shanghai, CN
• Yih-Shung Lin · Carrollton, US
• Charles Lin · Singapore, SG

Key dates

• Filing date: Nov 5, 1997
• Grant date: Apr 25, 2000
• Expiry date: Nov 5, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76837
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for fabricating a microelectronics fabrication. There is first provided a substrate employed within a microelectronics fabrication. There is then formed horizontally spaced over the substrate a plurality of patterned microelectronics structures. There is then formed over the substrate and the plurality of patterned microelectronics structures a microelectronics layer. The microelectronics layer has a first region of the microelectronics layer interposed between the plurality of patterned microelectronics structures and a second region of the microelectronics layer not interposed between the plurality of microelectronics structures. Finally, there is processed through a grazing angle method the microelectronics layer, where the grazing angle method processes substantially all of the second region of the microelectronics layer without substantially processing the first region of the microelectronics layer. There is also disclosed a apparatus through which may be practiced the grazing angle method, where the apparatus employs a charged particle beam within the grazing angle method and where the charged particle beam is spirally magnetically constrained by a magnetic field per…