Semiconductor interconnect barrier for fluorinated dielectrics
US6054398A · kind A · utility
36Cited by
2References
11Claims
0Family size
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Key dates
| Filing date | May 14, 1999 |
| Grant date | Apr 25, 2000 |
| Priority date | — |
| Expiry date | May 14, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for forming tantalum adhesion/barrier layers on semiconductor channels or in vias in low dielectric constant, fluorinated dielectric layers. The dielectric layers are defluorinated using hydrogen, ammonia, methane, or silane plasma and a subsequent tantalum deposition forms a less fluorine reactive tantalum carbide or tantalum silicide. Tantalum or tantalum nitride is then deposited over the less reactive form of tantalum to form the adhesion/barrier for deposition of a subsequent seed layer and a conductive material to form the vias and channels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.