Temperature controlled gas feedthrough
US6056823A · kind A · utility
87Cited by
14References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 1998 |
| Grant date | May 2, 2000 |
| Priority date | — |
| Expiry date | Mar 31, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T137/87684
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.