Method of forming an ohmic contact to a III-V semiconductor material
US6057219A · kind A · utility
7Cited by
3References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 1, 1994 |
| Grant date | May 2, 2000 |
| Priority date | — |
| Expiry date | Jul 1, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28575
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An ohmic contact to a III-V semiconductor material is fabricated by dry etching a silicon nitride layer overlying the III-V semiconductor material with a chemical comprised of a group VI element. An ohmic metal layer is formed on the III-V semiconductor material after the silicon nitride layer is etched and before any exposure of the III-V semiconductor material to a chemical which etches the III-V semiconductor material or removes the group VI element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.