Method of using hydrogen and oxygen gas in sputter deposition of aluminum-containing films and aluminum-containing films derived therefrom
US6057238A · kind A · utility
3Cited by
26References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 20, 1998 |
| Grant date | May 2, 2000 |
| Priority date | — |
| Expiry date | Mar 20, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/937
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An aluminum-containing film having an oxygen content within the film. The aluminum-containing film is formed by introducing hydrogen gas and oxygen gas along with argon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum or aluminum alloys onto a semiconductor substrate. The aluminum-containing film so formed is hillock-free and has low resistivity, relatively low roughness compared to pure aluminum, good mechanical strength, and low residual stress.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.