Semiconductor device

US6057566A · kind A · utility

Assignee

• Motorola, Inc. · US

Inventors

• Kurt Eisenbeiser · Tempe, US
• Yang Wang · Chandler, US
• Jenn Hwa Huang · Chandler, US
• Vijay K. Nair · Mesa, US

Key dates

• Filing date: Apr 29, 1998
• Grant date: May 2, 2000
• Expiry date: Apr 29, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/4738

Abstract

A semiconductor device includes a buffer layer (23) having a doped region (24), a barrier layer (26) over the buffer layer (23) and having a doped region (27), and a channel layer (25) located between the buffer layer (23) and the barrier layer (26) where the doping density of the doped region (27) in the barrier layer (26) is higher than the doping densities of the channel layer (25) and the doped region (24) in the first buffer layer (23).