In-situ doped rough polysilicon storage cell structure formed using gas phase nucleation
US6060354A · kind A · utility
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Key dates
| Filing date | Dec 18, 1997 |
| Grant date | May 9, 2000 |
| Priority date | — |
| Expiry date | Dec 18, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
Abstract
A method for forming a semiconductor memory device storage cell structure having an increased surface area. The storage cell structure has one or more rough polysilicon surfaces formed by depositing the polysilicon under conditions that result in gas phase dominant nucleation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.