Gas chemistry for improved in-situ cleaning of residue for a CVD apparatus
US6060397A · kind A · utility
55Cited by
27References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 14, 1995 |
| Grant date | May 9, 2000 |
| Priority date | — |
| Expiry date | Jul 14, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method (100) of cleaning residues from a chemical vapor deposition apparatus (10) is provided. The present method (100) includes introducing into a chamber (12) cleaning gases such as N.sub.2, C.sub.2 F.sub.6, and O.sub.2, and forming a plasma from the cleaning gases. The present method also includes removing residues from interior surfaces of the chamber 12 by forming a volatile product from the residues and at least one of the cleaning gases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.