High pressure release device for semiconductor fabricating equipment
US6063198A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 1998 |
| Grant date | May 16, 2000 |
| Priority date | — |
| Expiry date | Jan 21, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T137/1729
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides an improved device, system, and method for handling accidental explosions in a substrate processing chambers typically used in chemical vapor deposition (CVD). In particular, the invention channels the force from an explosion into alternate pathways leading away from the substitute processing chamber. In one embodiment, the high pressure release device for a semiconductor manufacturing system comprises of a diaphragm adapted to burst above a predetermined pressure. When installed in the system, the diaphragm is in fluid contact with the substrate processing chamber and covers the entrance to an exhaust passage which channels excess pressure away from the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.