RTCVD oxide and N.sub.2 O anneal for top oxide of ONO film
US6063666A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 1998 |
| Grant date | May 16, 2000 |
| Priority date | — |
| Expiry date | Jun 16, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/954
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, the present invention relates to a method of forming a flash memory cell involving the steps of forming a tunnel oxide on a substrate; forming a first polysilicon layer over the tunnel oxide; forming an insulating layer over the first polysilicon layer, the insulating layer comprising a first oxide layer over the first polysilicon layer, a nitride layer over the first oxide layer, and a second oxide layer over the nitride layer, wherein the second oxide layer is made by forming the second oxide layer by rapid thermal chemical vapor deposition at a temperature from about 780.degree. C. to about 820.degree. C. using SiH.sub.4 and N.sub.2 O and annealing in an N.sub.2 O atmosphere a temperature from about 980.degree. C. to about 1020.degree. C.; forming a second polysilicon layer over the insulating layer; etching at least the first polysilicon layer, the second polysilicon layer and the insulating layer, thereby defining at least one stacked gate structure; and forming a source region and a drain region in the substrate, wherein the source region and the drain region are self-aligned by the stacked gate structure, thereby forming at least one memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.