David Chi
31Patents
9h-index
56Co-inventors
78Inventor score
Filing activity: Dec 18, 1997 → Aug 28, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6749628B1 | Stent and catheter assembly and method for treating bifurcations | Human Necessities | 159 | Expired |
| US6605062B1 | Catheter for guidewire support or exchange | Human Necessities | 109 | Expired |
| US6702802B1 | Catheters with improved transition | Human Necessities | 98 | Expired |
| US6063666A | RTCVD oxide and N.sub.2 O anneal for top oxide of ONO film | Emerging Cross-Sectional Technologies | 98 | Expired |
| US6074917A | LPCVD oxide and RTA for top oxide of ONO film to improve reliability for flash memory devices | Emerging Cross-Sectional Technologies | 97 | Expired |
| US6613014B1 | Catheter hub with detachable push device | Human Necessities | 94 | Expired |
| US6433383B1 | Methods and arrangements for forming a single interpoly dielectric layer in a semiconductor device | Electricity | 46 | Expired |
| US6309927A | Method of forming high K tantalum pentoxide Ta2O5 instead of ONO stacked films to increase coupling ratio and improve reliability for flash memory devices | Electricity | 13 | Expired |
| US6162684A | Ammonia annealed and wet oxidized LPCVD oxide to replace ono films for high integrated flash memory devices | Electricity | 9 | Expired |
| US5981339A | Narrower erase distribution for flash memory by smaller poly grain size | Electricity | 8 | Expired |
| US8969169B1 | DRAM MIM capacitor using non-noble electrodes | Electricity | 7 | Active |
| US6114230A | Nitrogen ion implanted amorphous silicon to produce oxidation resistant and finer grain polysilicon based floating gates | Electricity | 5 | Expired |
| US9281357B2 | DRAM MIM capacitor using non-noble electrodes | Electricity | 5 | Active |
| US6232630A | Light floating gate doping to improve tunnel oxide reliability | Electricity | 3 | Expired |
| US8912518B2 | Resistive random access memory cells having doped current limiting layers | Electricity | 3 | Active |
| US8882826B2 | Intravascular stent | Human Necessities | 3 | Active |
| US7296361B2 | Measuring device and method of measuring | Human Necessities | 1 | Expired |
| US6221164A | Method of in-situ cleaning for LPCVD teos pump | Chemistry; Metallurgy | 1 | Expired |
| US10530061B2 | Mixed mode slot antennas | Electricity | 1 | Active |
| US8847187B2 | Method of forming anneal-resistant embedded resistor for non-volatile memory application | Electricity | 1 | Active |
| US6458212B1 | Mesh filter design for LPCVD TEOS exhaust system | Emerging Cross-Sectional Technologies | 0 | Expired |
| US6184084A | Method to elimate silicide cracking for nand type flash memory devices by implanting a polish rate improver into the second polysilicon layer and polishing it | Electricity | 0 | Expired |
| US10381712B2 | Dual-band wireless LAN antenna | Electricity | 0 | Active |
| US9030018B2 | Test vehicles for evaluating resistance of thin layers | Electricity | 0 | Active |
| US11447832B2 | Compositions and methods for oncology precision assays | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.