Method of reducing wafer particles after partial saw using a superhard protective coating
US6063696A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 1998 |
| Grant date | May 16, 2000 |
| Priority date | — |
| Expiry date | May 4, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/78
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a monolithic device, preferably a micromechanical device, from a wafer (20) by carefully selecting the composition of two or more layers of photoresist (52,54). The present invention uses a superhard protective layer such as DLC or TiW deposited over the partially fabricated device prior to a partial-saw. This superhard protective layer reduces the generation of defects in the underlying photoresist layers, and allows a wet chemical HF acid to etch away particles and damage of the underlying oxide edges. A 6% BHF solution can be utilized. The present invention substantially improves the yield of micromechanical devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.