Method and apparatus for dry etching with temperature control
US6063710A · kind A · utility
38Cited by
12References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 21, 1997 |
| Grant date | May 16, 2000 |
| Priority date | — |
| Expiry date | Feb 21, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of dry etching treatment capable of attaining both high selectivity and fine fabrication at a high accuracy simultaneously is provided, in which an etching treatment comprising a plurality of steps are applied to a specimen W in one identical processing apparatus, and the temperature of the specimen is changed between etching of one step and etching of another step succeeding thereto, among the plurality of the steps, thereby applying etching at temperatures different between the one step and the step succeeding thereto.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.