Etching of silicon nitride
US6066267A · kind A · utility
13Cited by
50References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 1999 |
| Grant date | May 23, 2000 |
| Priority date | — |
| Expiry date | Jun 29, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Silicon nitride is etched employing a composition containing a fluoride containing compound, certain organic solvents, and water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.