Method and apparatus for the molecular identification of defects in semiconductor manufacturing using a radiation scattering technique such as raman spectroscopy
US6067154A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 1998 |
| Grant date | May 23, 2000 |
| Priority date | — |
| Expiry date | Oct 23, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/656
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and apparatus are provided for obtaining molecular information about materials at a selected site on or in a semiconductor topography. In a preferred embodiment, the selected site is a defect from a defect map generated by an automated wafer inspection system. A sample stage and drive/alignment system are used to move the semiconductor topography such that a selected defect is aligned with the illumination provided by a radiation scattering measurement system. A Raman spectroscopy system may be used for the radiation scattering measurement. The intensity and frequency of inelastically scattered radiation from the vicinity of the selected defect is compared to standard spectra to determine the chemical composition and material phase of the region analyzed. The depth into the topography probed may be adjusted by changing the wavelength of radiation used in the Raman spectroscopy measurement. In this way, the source of a particular defect, even if buried in the topography during the semiconductor fabrication process, may be determined. Knowledge of the fabrication process guides selection of the appropriate depths to be analyzed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.