Inventor · Gresham, OR, US

Charles E. May

118Patents
24h-index
47Co-inventors
90Inventor score

Filing activity: Nov 27, 1974 → Jan 14, 2010

Most-cited inventions

PatentTitleAreaCited byStatus
US6225168A Semiconductor device having metal gate electrode and titanium or tantalum nitride gate dielectric barrier layer and process of fabrication thereof Electricity 160 Expired
US6210999A Method and test structure for low-temperature integration of high dielectric constant gate dielectrics into self-aligned semiconductor devices Electricity 135 Expired
US6452412B1 Drop-in test structure and methodology for characterizing an integrated circuit process flow and topography Electricity 110 Expired
US6150222A Method of making a high performance transistor with elevated spacer formation and self-aligned channel regions Electricity 81 Expired
US5963803A Method of making N-channel and P-channel IGFETs with different gate thicknesses and spacer widths Electricity 61 Expired
US6130012A Ion beam milling to generate custom reticles Physics 56 Expired
US5943585A Trench isolation structure having low K dielectric spacers arranged upon an oxide liner incorporated with nitrogen Electricity 48 Expired
US6008095A Process for formation of isolation trenches with high-K gate dielectrics Electricity 48 Expired
US6323519A Ultrathin, nitrogen-containing MOSFET sidewall spacers using low-temperature semiconductor fabrication process Electricity 46 Expired
US6268637A Method of making air gap isolation by making a lateral EPI bridge for low K isolation advanced CMOS fabrication Electricity 42 Expired
US6067154A Method and apparatus for the molecular identification of defects in semiconductor manufacturing using a radiation scattering technique such as raman spectroscopy Physics 42 Expired
US6084280A Transistor having a metal silicide self-aligned to the gate Electricity 42 Expired
US6410967B1 Transistor having enhanced metal silicide and a self-aligned gate electrode Electricity 39 Expired
US6560504B1 Use of contamination-free manufacturing data in fault detection and classification as well as in run-to-run control Emerging Cross-Sectional Technologies 35 Expired
US6207485A Integration of high K spacers for dual gate oxide channel fabrication technique Electricity 35 Expired
US6274442A Transistor having a nitrogen incorporated epitaxially grown gate dielectric and method of making same Electricity 35 Expired
US6100173A Forming a self-aligned silicide gate conductor to a greater thickness than junction silicide structures using a dual-salicidation process Electricity 34 Expired
US6150708A Advanced CMOS circuitry that utilizes both sides of a wafer surface for increased circuit density Electricity 34 Expired
US6144071A Ultrathin silicon nitride containing sidewall spacers for improved transistor performance Emerging Cross-Sectional Technologies 33 Expired
US5882983A Trench isolation structure partially bound between a pair of low K dielectric structures Electricity 27 Expired
US6140674A Buried trench capacitor Electricity 27 Expired
US6087705A Trench isolation structure partially bound between a pair of low K dielectric structures Electricity 25 Expired
US5915195A Ion implantation process to improve the gate oxide quality at the edge of a shallow trench isolation structure Electricity 25 Expired
US6005285A Argon doped epitaxial layers for inhibiting punchthrough within a semiconductor device Electricity 25 Expired
US6151119A Apparatus and method for determining depth profile characteristics of a dopant material in a semiconductor device Electricity 24 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.