Salicide process
US6069032A · kind A · utility
13Cited by
4References
20Claims
0Family size
Assignees
Inventor
Key dates
| Filing date | Aug 17, 1999 |
| Grant date | May 30, 2000 |
| Priority date | — |
| Expiry date | Aug 17, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A salicide process is described. The edge of a gate are etched to form a reversed T-shaped gate that is then self-aligned by a silicide film. This etching step can be performed by using a silicon oxynitride layer as an etching mask over the gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.