Techniques for etching a transition metal-containing layer
US6069035A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 1997 |
| Grant date | May 30, 2000 |
| Priority date | — |
| Expiry date | Dec 19, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3343
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for etching at least partially through a transition metal-containing layer disposed above a substrate is disclosed. The transition metal-containing layer is disposed below an etch mask. The method includes providing a plasma processing system having a plasma processing chamber, and configuring the plasma processing chamber to etch the transition metal-containing layer. The plasma processing chamber configuring process includes configuring the plasma processing chamber to receive a source gas that includes HCl and Ar, and configuring a power supply associated with the plasma processing chamber to supply energy to strike a plasma from the source gas. The plasma processing chamber configuring process further includes configuring the plasma processing chamber to etch at least partially the transition metal-containing layer with the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.