Method for forming a junctionless antifuse
US6069064A · kind A · utility
21Cited by
13References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 26, 1996 |
| Grant date | May 30, 2000 |
| Priority date | — |
| Expiry date | Aug 26, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for forming a junctionless antifuse semiconductor structure comprises forming an antifuse in non-active areas of a semiconductor wafer. In one embodiment, the antifuse is formed over a polysilicon layer, which is coupled to a field oxide layer. In a further embodiment, the polysilicon layer comprises a bottom conductor layer in the antifuse. In another embodiment, a refractory metal silicide layer is formed between the polysilicon layer and the antifuse. In yet a further embodiment, the refractory metal silicide layer comprises the bottom conductor layer in the antifuse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.