Process of forming metal films and multi layer structure
US6069093A · kind A · utility
4Cited by
12References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 18, 1998 |
| Grant date | May 30, 2000 |
| Priority date | — |
| Expiry date | Jun 18, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a process of forming a metal film, when metal wiring is formed on a diffusion layer (an electrode, etc.) of a circuit element formed on a silicon semiconductor wafer, a Ti film is deposited on a surface of a processed body by PECVD using TiCl.sub.4 gas and H.sub.2 gas as material gas. A Ti--Si--N film is formed on the diffusion layer surface by adding N.sub.2 gas to the material gas, and the Ti film is formed subsequently on the Ti--Si--N film. The Ti--Si--N film suppresses diffusion of silicon from the semiconductor wafer side.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.