Thin film resistor and fabrication method thereof

US6069398A · kind A · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Daniel Kadosh · Austin, US
• Mark I. Gardner · Mabank, US
• Frederick N. Hause · Austin, US

Key dates

• Filing date: Aug 1, 1997
• Grant date: May 30, 2000
• Expiry date: Aug 1, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D88/00

Abstract

A resistor is formed between devices in an integrated circuit by forming a patterned trench in an intralayer dielectric (ILD) deposited over the devices, filling the trench with polysilicon and planarizing the polysilicon. The resistance of the resistor is defined by determining and selecting the size and form of the trench including the width, length, depth and orientation of the trench. In some embodiments, the resistance of the resistor is also controlled by adding selected amounts and species of dopants to the polysilicon. In some embodiments, the resistance is controlled by directly saliciding the polysilicon in the trench.