Process for precoating plasma CVD reactors
US6071573A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 1997 |
| Grant date | Jun 6, 2000 |
| Priority date | — |
| Expiry date | Dec 30, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for precoating interior surfaces of a plasma CVD reactor after removal of built-up fluorinated silicon oxide residues by in-situ reactor cleaning. The deposition gas mixture includes F, Si, O and optional Ar. The interior surfaces can be precoated with fluorinated silicon oxide using a deposition gas mixture which includes 80 to 200 sccm SiF.sub.4 and 150 to 400 sccm O.sub.2 supplied to the reactor in a gas flow ratio of O.sub.2 :SiF.sub.4 of 1.4 to 3.2. The precoated film can be deposited at a high deposition rate to maintain high throughput in the reactor while providing a precoat film having low compressive stress and thus high film adhesion and low particle generation during subsequent substrate processing in the reactor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.