Electrostatic discharge protective circuit formed by use of a silicon controlled rectifier
US6072677A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 3, 1998 |
| Grant date | Jun 6, 2000 |
| Priority date | — |
| Expiry date | Nov 3, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/601
Abstract
An electrostatic discharge protective circuit formed by use of a silicon controller rectifier is coupled to an input port and an internal circuit for discharging electrostatic charges on the input port to ground. When the electrostatic charges are applied on the input port, a punch-through effect is created between a first P-type diffusion region and a second N-type diffusion region to turn on a parasitic NPN bipolar junction transistor. At the same time, a voltage is applied on a gate of the MOS transistor via a small-signal equivalent capacitor to turn on itself, thereby discharging the electrostatic charges. Accordingly, the trigger voltage of the silicon controller rectifier can be efficiently lowered to improve the electrostatic discharge protective capability of the silicon control rectifier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.