Plasma processing apparatus
US6074518A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jan 4, 1999 |
| Grant date | Jun 13, 2000 |
| Priority date | — |
| Expiry date | Jan 4, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32623
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus comprises a chamber, and an upper electrode and a lower electrode, parallelly provided in the chamber to oppose each other at a predetermined interval, for defining a plasma generation region between the electrodes. An object to be processed is mounted on the lower electrode. RF powers are supplied to the electrodes, so that a plasma generates between the electrodes, thereby performing a plasma process with respect to the object to be processed. A cylindrical ground electrode is provided around the plasma generation region in the chamber, for enclosing the plasma in the plasma generation region, and has a plurality of through holes for passing a process gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.