Method of preventing copper dendrite formation and growth
US6074949A · kind A · utility
40Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 25, 1998 |
| Grant date | Jun 13, 2000 |
| Priority date | — |
| Expiry date | Nov 25, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP. Embodiments include removing up to 20 .ANG. of silicon oxide by buffing with a solution containing ammonium fluoride, diammonium hydrogen citrate, triammonium citrate, a surfactant and de-ionized water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.