Kai Yang
33Patents
15h-index
25Co-inventors
77Inventor score
Filing activity: Dec 18, 1997 → Jan 10, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6103085A | Electroplating uniformity by diffuser design | Chemistry; Metallurgy | 72 | Expired |
| US6113462A | Feedback loop for selective conditioning of chemical mechanical polishing pad | Performing Operations; Transporting | 56 | Expired |
| US6468894B1 | Metal interconnection structure with dummy vias | Electricity | 52 | Expired |
| US6074949A | Method of preventing copper dendrite formation and growth | Electricity | 40 | Expired |
| US6259115A | Dummy patterning for semiconductor manufacturing processes | Electricity | 38 | Expired |
| US6143656A | Slurry for chemical mechanical polishing of copper | Electricity | 35 | Expired |
| US6350687B1 | Method of fabricating improved copper metallization including forming and removing passivation layer before forming capping film | Emerging Cross-Sectional Technologies | 35 | Expired |
| US6410418B1 | Recess metallization via selective insulator formation on nucleation/seed layer | Electricity | 33 | Expired |
| US6218290A | Copper dendrite prevention by chemical removal of dielectric | Emerging Cross-Sectional Technologies | 27 | Expired |
| US6734559B1 | Self-aligned semiconductor interconnect barrier and manufacturing method therefor | Electricity | 24 | Expired |
| US6140239A | Chemically removable Cu CMP slurry abrasive | Electricity | 24 | Expired |
| US6350678B1 | Chemical-mechanical polishing of semiconductors | Electricity | 20 | Expired |
| US6605843B1 | Fully depleted SOI device with tungsten damascene contacts and method of forming same | Electricity | 20 | Expired |
| US6410442B1 | Mask-less differential etching and planarization of copper films | Electricity | 17 | Expired |
| US7132363B2 | Stabilizing fluorine etching of low-k materials | Electricity | 15 | Expired |
| US6169034A | Chemically removable Cu CMP slurry abrasive | Chemistry; Metallurgy | 11 | Expired |
| US6319833A | Chemically preventing copper dendrite formation and growth by spraying | Electricity | 10 | Expired |
| US6596637B1 | Chemically preventing Cu dendrite formation and growth by immersion | Emerging Cross-Sectional Technologies | 10 | Expired |
| US6162727A | Chemical treatment for preventing copper dendrite formation and growth | Emerging Cross-Sectional Technologies | 9 | Expired |
| US6197690A | Chemically preventing Cu dendrite formation and growth by double sided scrubbing | Electricity | 9 | Expired |
| US6207569A | Prevention of Cu dendrite formation and growth | Electricity | 9 | Expired |
| US8125460B2 | Method for manufacturing touch panel with glass panel layer and glass substrate | Physics | 9 | Active |
| US6177349A | Preventing Cu dendrite formation and growth | Electricity | 8 | Expired |
| US6924220B1 | Self-aligned gate formation using polysilicon polish with peripheral protective layer | Electricity | 4 | Expired |
| US6332989A | Slurry for chemical mechanical polishing of copper | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.