Method of programming phase-change memory element
US6075719A · kind A · utility
108Cited by
1References
18Claims
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Key dates
| Filing date | Jun 22, 1999 |
| Grant date | Jun 13, 2000 |
| Priority date | — |
| Expiry date | Jun 22, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0064
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of programming an electrically programmable phase-change memory element to the low resistance state. A first pulse of energy sufficient to transform the device from the low to high resistance states is applied, and a second pulse of energy sufficient to transform the device from the high to low resistance states is applied following the first pulse. In another programming method, the present and desired device states are compared, and programming pulses are applied only if the state of the device needs to be changed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.