Inter-conductive layer fuse for integrated circuits
US6078091A · kind A · utility
17Cited by
4References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 4, 1998 |
| Grant date | Jun 20, 2000 |
| Priority date | — |
| Expiry date | Nov 4, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and structure for customizing or repairing integrated circuits using passivated tungsten fuses and low-power energy beams to select which tungsten fuses are to be removed. The tungsten fuses are formed in an array to connect possible connection points of the device. A low-power energy source then selects undesired connection points, and a conventional etch removes the selected tungsten fuses, thereby customizing or repairing the integrated circuit. Because neither precision custom masks nor high energy laser sources are required, the problems associated with conventional methods are reduced or eliminated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.