Thermal post-deposition treatment of halogen-doped films to improve film stability and reduce halogen migration to interconnect layers
US6079354A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 1998 |
| Grant date | Jun 27, 2000 |
| Priority date | — |
| Expiry date | Apr 24, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of stabilizing a halogen-doped silicon oxide film to reduce halogen atoms migrating from said film during subsequent processing steps. A halogen-doped film is deposited over a substrate and then subjected to a degassing step in which the film is briefly heated to a temperature of between about 300 and 550.degree. C. before deposition of a diffusion barrier layer. It is believed that such a heat treatment step removes loosely bonded halogen atoms from the halogen-doped film and thus the treatment is referred to as a degassing step. In a preferred version of this embodiment, the halogen-doped silicon oxide film is an FSG film that is subjected to a degassing treatment for between about 35 and 50 seconds.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.