Integration of low-k polymers into interlevel dielectrics using controlled electron-beam radiation
US6080526A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 1998 |
| Grant date | Jun 27, 2000 |
| Priority date | — |
| Expiry date | Feb 24, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/143
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for the preparation of substrates used in the manufacture of integrated circuits wherein spin-on low dielectric constant (low-k) polymer films are applied on semiconductor substrates. A non-etchback processing of spin-on low-k polymer films, without losing the low dielectric constant feature of the film, especially in between metal lines, is achieved utilizing electron beam radiation. A polymeric dielectric film is applied and dried onto a substrate and exposed to electron beam radiation under conditions sufficient to partially cure the dielectric layer. The exposing forms a relatively more hardened topmost portion of the dielectric layer and a relatively less hardened underlying portion of the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.