Jingjun Yang
9Patents
5h-index
12Co-inventors
56Inventor score
Filing activity: Feb 24, 1998 → Jul 18, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6080526A | Integration of low-k polymers into interlevel dielectrics using controlled electron-beam radiation | Emerging Cross-Sectional Technologies | 83 | Expired |
| US6582777B1 | Electron beam modification of CVD deposited low dielectric constant materials | Electricity | 54 | Expired |
| US6042994A | Nanoporous silica dielectric films modified by electron beam exposure and having low dielectric constant and low water content | Electricity | 45 | Expired |
| US6177143A | Electron beam treatment of siloxane resins | Electricity | 26 | Expired |
| US6235353A | Low dielectric constant films with high glass transition temperatures made by electron beam curing | Emerging Cross-Sectional Technologies | 6 | Expired |
| US8952199B2 | Methods of and formulations for reducing and inhibiting the growth of the concentration of microbes in water-based fluids and systems used with them | Chemistry; Metallurgy | 2 | Active |
| US9203528B2 | Method for reducing frequency band interference for multi-mode terminal, multi-mode terminal, and network device | Electricity | 1 | Active |
| US7309514B2 | Electron beam modification of CVD deposited films, forming low dielectric constant materials | Electricity | 1 | Expired |
| US9139796B2 | Methods of and formulations for reducing and inhibiting the growth of the concentration of microbes in water-based fluids and systems used with them | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.