Optical proximity correction of L and T shaped patterns on negative photoresist
US6080527A · kind A · utility
35Cited by
5References
3Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 18, 1999 |
| Grant date | Jun 27, 2000 |
| Priority date | — |
| Expiry date | Nov 18, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical proximity correction method for rectifying pattern on negative photoresist. Line pattern of integrated circuit is divided into L-shape regions or T-shaped regions. The L-shaped or T-shaped regions are further dissected into rectangular patches. Area of each rectangular patch is suitably reduced and reproduced onto a photomask. The photomask is used to form a corrected photoresist pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.