Anseime Chen
10Patents
6h-index
19Co-inventors
52Inventor score
Filing activity: Nov 18, 1999 → May 15, 2001
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6420791B1 | Alignment mark design | Emerging Cross-Sectional Technologies | 55 | Expired |
| US6323123A | Low-K dual damascene integration process | Electricity | 43 | Expired |
| US6080527A | Optical proximity correction of L and T shaped patterns on negative photoresist | Physics | 35 | Expired |
| US6680252B2 | Method for planarizing barc layer in dual damascene process | Electricity | 13 | Expired |
| US6492097B1 | Process for increasing a line width window in a semiconductor process | Physics | 7 | Expired |
| US6417096B1 | Method for avoiding photo residue in dual damascene with acid treatment | Electricity | 6 | Expired |
| US6489085B2 | Thermal reflow photolithographic process | Physics | 5 | Expired |
| US6350681B1 | Method of forming dual damascene structure | Electricity | 4 | Expired |
| US6444410B1 | Method of improving photoresist profile | Physics | 2 | Expired |
| US6312855A | Three-phase phase shift mask | Physics | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.