Method of making a MOS-gated semiconductor device with a single diffusion

US6080614A · kind A · utility

Inventors

• John Manning Savidge Neilson · King of Prussia, US
• Linda S. Brush · Smethport, US
• Frank Stensney · Smethport, US
• John L. Benjamin · Smethport, US
• Anup Bhalla · Santa Clara, US
• Christopher L. Rexer · Mountain Top, US
• Richard Stokes · Shavertown, US
• Christopher Boguslow Kocon · Plains, US
• Louise Skurkey · Conyngham, US
• Christopher Michael Scarba · Tresckow, US

Key dates

• Filing date: Jun 30, 1997
• Grant date: Jun 27, 2000
• Expiry date: Jun 30, 2017

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S148/126

Abstract

A method of fabricating a MOS-gated semiconductor device in which arsenic dopant is implanted through a mask to form a first layer, boron dopant is implanted through the mask to form a second layer deeper than the first layer, and in which a single diffusion step diffuses the implanted arsenic and the implanted boron at the same time to form a P+ body region with an N+ source region therein and a P type channel region.