Method of fabricating a metal-oxide-semiconductor transistor with a metal gate
US6080646A · kind A · utility
26Cited by
4References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 20, 1998 |
| Grant date | Jun 27, 2000 |
| Priority date | — |
| Expiry date | May 20, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/665
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a MOS transistor having an aluminum gate is disclosed. On a MOS transistor having a polysilicon gate, an insulating layer is first formed. The device surface is then polished by CMP to expose the polysilicon gate. Then, an aluminum layer is formed on the substrate and then processed through annealing at more than 500.degree. C. so that a portion of the aluminum layer substitutes the polysilicon gate to form an aluminum gate. After removing the substituted polysilicon and the non-reacted aluminum, the NMOS transistor with an aluminum gate is completed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.