Integrated nitrogen-treated titanium layer to prevent interaction of titanium and aluminum
US6080665A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 1997 |
| Grant date | Jun 27, 2000 |
| Priority date | — |
| Expiry date | Apr 11, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention generally provides a method for processing a substrate having exposed surfaces of titanium and/or silicon prior to deposition of aluminum. The substrate is positioned adjacent a process zone which provides a nitrogen plasma so that exposed areas of titanium and silicon on the substrate are stuffed with nitrogen to form titanium nitride (TiN) and various compounds of silicon and nitrogen (Si.sub.x N.sub.y), respectively. The nitrogen treated surfaces, i.e, TiN and silicon/nitrogen compounds, are resistant to interaction with aluminum. In this manner, the formation of electrically insulating TiAl.sub.3 and/or the spiking of silicon is reduced or eliminated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.