Single-substrate-heat-treatment apparatus in semiconductor processing system
US6080965A · kind A · utility
43Cited by
13References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 9, 1998 |
| Grant date | Jun 27, 2000 |
| Priority date | — |
| Expiry date | Sep 9, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A single-substrate-heat-treatment apparatus heats a semiconductor wafer by scanning the wafer with light having high energy density. Light emitted by a light source is reflected by a reflection mirror mechanism, and is then focused on the surface of the wafer on a work table via a transparent window of a process chamber. During heat treatment, the work table or reflection mirror mechanism is moved to scan the wafer surface with the light coming from the light source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.