Endpoint detection for semiconductor processes
US6081334A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 17, 1998 |
| Grant date | Jun 27, 2000 |
| Priority date | — |
| Expiry date | Apr 17, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate 20 in a process chamber 42 is processed at process conditions suitable for processing a layer 30 on the substrate 20, the process conditions comprising one or more of process gas composition and flow rates, power levels of process gas energizers, process gas pressure, and substrate temperature. The intensity of a reflected light beam 78 reflected from the layer 30 on the substrate 20 is measured over time, to determine a measured waveform pattern. The measured waveform pattern is compared to a pretetermined characteristic waveform pattern, and when the two waveform patterns are similar or substantially the same, the process conditions are changed to change a rate of processing or a process selectivity ratio of the layer 30 on the substrate 20 before the entire layer 30 is completely processed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.