Semiconductor device having a metal containing layer overlying a gate dielectric
US6084279A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 1997 |
| Grant date | Jul 4, 2000 |
| Priority date | — |
| Expiry date | Mar 31, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Metal semiconductor nitride gate electrodes (40, 70) are formed for use in a semiconductor device (60). The gate electrodes (40, 70) may be formed by sputter deposition, low pressure chemical vapor deposition (LPCVD), or plasma enhanced chemical vapor deposition (PECVD). The materials are expected to etch similar to silicon-containing compounds and may be etched in traditional halide-based etching chemistries. The metal semiconductor nitride gate electrodes (40, 70) are relatively stable, can be formed relatively thinner than traditional gate electrodes (40, 70) and work functions near the middle of the band gap for the material of the substrate (12).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.