Target for use in magnetron sputtering of nickel for forming metallization films having consistent uniformity through life
US6086725A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 1998 |
| Grant date | Jul 11, 2000 |
| Priority date | — |
| Expiry date | Apr 2, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3405
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Improved targets for use in DC magnetron sputtering of nickel or like ferromagnetic face-centered cubic (FCC) metals are disclosed for forming metallization films having effective edge-to-edge deposition uniformity of 5%(3.sigma.) or better. Such targets may be characterized as having: (a) a homogeneous texture mix that is at least 20% of a <200> texture content and less than 50% of a <111> texture content, (b) an initial pass-through flux factor (% PTF) of about 30% or greater; and (c) a homogeneous grain size of about 200 .mu.m or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.