Patent · US Expired

Target for use in magnetron sputtering of nickel for forming metallization films having consistent uniformity through life

US6086725A · kind A · utility

30Cited by
7References
31Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 2, 1998
Grant dateJul 11, 2000
Priority date
Expiry dateApr 2, 2018

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/3405
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Improved targets for use in DC magnetron sputtering of nickel or like ferromagnetic face-centered cubic (FCC) metals are disclosed for forming metallization films having effective edge-to-edge deposition uniformity of 5%(3.sigma.) or better. Such targets may be characterized as having: (a) a homogeneous texture mix that is at least 20% of a <200> texture content and less than 50% of a <111> texture content, (b) an initial pass-through flux factor (% PTF) of about 30% or greater; and (c) a homogeneous grain size of about 200 .mu.m or less.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.