Chemical vapor deposition of a copolymer of p-xylylene and a multivinyl silicon/oxygen comonomer
US6086952A · kind A · utility
46Cited by
30References
4Claims
0Family size
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Key dates
| Filing date | Jun 15, 1998 |
| Grant date | Jul 11, 2000 |
| Priority date | — |
| Expiry date | Jun 15, 2018 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB05D1/60
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming thin polymer layers having low dielectric constants or semiconductor substrates. In one embodiment, the method includes the vaporization of stable di-p-xylylene, the pyrolytic conversion of such gaseous dimer material into reactive monomers, and blending of the resulting gaseous p-xylylene monomers with one or more comonomers having silicon-oxygen bonds and at least two pendent carbon--carbon double bonds. The copolymer films have low dielectric constants, improved thermal stability, and excellent adhesion to silicon oxide layers in comparison to parylene-N homopolymers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.